Aerospace Instrument-Making Annotation << Back ON THE APPLICATION OF BETAVOLTAICS ON SILICON PIN- STRUCTURES UNDER CONDITIONS OF COSMOS RADIATION Yu.S. Nagornov, V.N. Murashev We discussed the possibilities of betavoltaics as power sources for semiconductor circuits under conditions of cosmic radiation. Betavoltaics effect under source of nickel-63 was simulated for silicon pin- structures under radiation conditions. We calculated the optimal parameters of the betavoltaics microchannel structures, which are slotted structure with vertical walls, on which is formed the p-n-junction and there is radioactive -isotope Ni-63 in slits. The optimal size of the slits and the distance between them are values of 3 and 10 microns, respectively. Modeling of betavoltaics effect on microchannel silicon structures was shown the ability to gen-erate currents up to values of 1600 nA/cm2. We have studied the radiation re-sistance betavoltaics structures. The dose dependence of the efficiency of silicon structures under - and -irradiation showed that higher doses of 2·1014 см–2 and 1022 см–2 respectively, violation occurs performance of structures, that must be considered when developing microelectronic circuits for application under condi-tions of cosmic radiation. Key words: betavoltaics, the radiation exposure of silicon, -radiation, -radiation, the ratio of collection of charge carriers. Contacts: E-mail: Nagornov.Yuri@gmail.com Pp. 48-56.